10th International Workshop on Zinc Oxide and Other Oxide Semiconductors

Wednesday morning

Session 3: Growth and physics of nano-objects (Chair: L. Brillson)

9:00 Chih-Chung Yang (National Taiwan University, Taiwan)

Mechanisms determining the polarities of Ga-doped ZnO nanowires grown through Zn- and O-rich vapor-liquid-solid processes

9:15 Vincent Sallet (CNRS-UVSQ, Versailles, France)

ZnO nanowire facet transformation induced by Ga doping

9:30 Vincent Consonni (Grenoble INP – Minatec, France)

Polarity-dependent formation mechanisms and high electrical conductivity of selective area grown ZnO nanorods

9:45 Bruno Masenelli (INL-INSA Lyon, France)

Ga and Al degeneratly doped ZnO nanocrystals for Mid IR plasmonics

10:00 Yamin Leprince-Wang (Université Paris-Est, France)

Enhanced photocatalytic activity of metal-doped ZnO nanowires

10:15 Jacek Wojnarowicz (Institute of High Pressure Physics, Polish Academy of Sciences, Poland)

Size controlled microwave solvothermal synthesis of ZnO NPs

10:30 Coffee break

Session 4: Defects in oxide semiconductors I (Chair: C.-C. Yang)

11:00 Leonard Brillson (The Ohio State University, USA)

Native point defect identification and control in Ga2O3

11:15 Durga Basak (Indian Association for the Cultivation of Science, India)

An insight into the influence of the donor compensating defects in doped ZnO thin films

11:30 Ramòn Schifano (Institute of Physics, Polish Academy of Sciences, Poland)

Electrically active defects in H implanted ZnO

11:45 Pooneh Saadatkia (Bowling Green State University, USA)

Defect studies in high quality epitaxial β-Ga2O3 films

12:00 Julie Bonkerud (University of Oslo, Norway)

The effect of heat treatment on electrically active defects in hydrogenated and hydrogen-implanted TiO2

12:15 Lunch