Session 3: Growth and physics of nano-objects (Chair: L. Brillson) |
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| 9:00 | Chih-Chung Yang (National Taiwan University, Taiwan)
Mechanisms determining the polarities of Ga-doped ZnO nanowires grown through Zn- and O-rich vapor-liquid-solid processes |
WeO_3.1 |
| 9:15 | Vincent Sallet (CNRS-UVSQ, Versailles, France)
ZnO nanowire facet transformation induced by Ga doping |
WeO_3.2 |
| 9:30 | Vincent Consonni (Grenoble INP – Minatec, France)
Polarity-dependent formation mechanisms and high electrical conductivity of selective area grown ZnO nanorods |
WeO_3.3 |
| 9:45 | Bruno Masenelli (INL-INSA Lyon, France)
Ga and Al degeneratly doped ZnO nanocrystals for Mid IR plasmonics |
WeO_3.4 |
| 10:00 | Yamin Leprince-Wang (Université Paris-Est, France)
Enhanced photocatalytic activity of metal-doped ZnO nanowires |
WeO_3.5 |
| 10:15 | Jacek Wojnarowicz (Institute of High Pressure Physics, Polish Academy of Sciences, Poland)
Size controlled microwave solvothermal synthesis of ZnO NPs |
WeO_3.6 |
| 10:30 | Coffee break | |
Session 4: Defects in oxide semiconductors I (Chair: C.-C. Yang) |
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| 11:00 | Leonard Brillson (The Ohio State University, USA)
Native point defect identification and control in Ga2O3 |
WeO_4.1 |
| 11:15 | Durga Basak (Indian Association for the Cultivation of Science, India)
An insight into the influence of the donor compensating defects in doped ZnO thin films |
WeO_4.2 |
| 11:30 | Ramòn Schifano (Institute of Physics, Polish Academy of Sciences, Poland)
Electrically active defects in H implanted ZnO |
WeO_4.3 |
| 11:45 | Pooneh Saadatkia (Bowling Green State University, USA)
Defect studies in high quality epitaxial β-Ga2O3 films |
WeO_4.4 |
| 12:00 | Julie Bonkerud (University of Oslo, Norway)
The effect of heat treatment on electrically active defects in hydrogenated and hydrogen-implanted TiO2 |
WeO_4.5 |
| 12:15 | Lunch | |
