10th International Workshop on Zinc Oxide and Other Oxide Semiconductors

Tuesday

14:00                              Opening         (Elżbieta Guziewicz)

Session 1: Optical properties of ZnO and related materials (Chair: D. C. Look)

14:15 Shigefusa Chichibu (Tohoku University, Japan)

The origin and properties of intrinsic nonradiative recombination centers in the bulk and epitaxial ZnO

TuO_1.1
14:30 Mizuki Ono (Kogakuin University, Japan)

Excitation density and temperature dependence of deep ultraviolet cathodoluminescence in rocksalt-structured MgxZn1-xO

TuO_1.2
14:45 Kazunobu Kojima (Tohoku University, Japan)

Relationship between internal quantum efficiency of radiation and photoluminescence lifetime in a ZnO single crystal

TuO_1.3
15:00 Vishnukanthan Venkatachalapathy (University of Oslo, Norway)

Direct and indirect band gaps of cadmium oxide

TuO_1.4
15:15 Coffee break

Session 2: Transparent and amorphous conductive oxides (Chair: S. Chichibu)

15:45 David Look (Wright State University, USA)

Highly conductive Ga2O3: classical and quantum conductance

TuO_2.1
16:00 Markus R. Wagner (Technical University Berlin, Germany)

Excitons, phonons, and thermal conductivity of alpha-, beta-, gamma-, and epsilon-Ga2O3 single crystals and epitaxial layers

TuO_2.2
16:15 Werner Mader (University of Bonn, Germany)

InGaO3(ZnO)0.5: Synthesis, Structure and Cation Distribution

TuO_2.3
16:30 Farida Selim (Bowling Green State University, USA)

Highly conductive highly transparent indium gallium doped zinc oxide (IGZO) by digital doping

TuO_2.4
16:45 Julen Tamayo-Arriola (Universidad Politécnica de Madrid, Spain)

Bandgap energy and electrical properties of cubic Cd1-xZnxO

TuO_2.5
17:00 Zhizhen Ye (Zhejiang University, China)

Ultrathin amorphous oxide semiconductors and the related application

TuO_2.6
17:15 Jakub Kaczmarski (Institute of Electron Technology, Poland)

Engineering properties of amorphous In-Ga-Zn-O thin films for flexible and transparent electronics

TuO_2.7
18:30
21:00
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