10th International Workshop on Zinc Oxide and Other Oxide Semiconductors

Thursday morning

Session 7: Photonic structures and microcavities (Chair: A. Kuznetsov)

9:00 Jesus Zuniga-Perez (CRHEA-CRNS, Valbonne, France)

ZnO/ZnMgO monolithic microcavities: from a vertical polariton laser to an edge-emitting polariton laser

9:15 Adrian Kozanecki (Institute of Physics, Polish Academy of Sciences. Poland)

Studies of nonpolar ZnO/ZnMgO monolithic photonic structures

9:30 Takumi Kasuya (Tohoku University, Sendai, Japan)

Fabrication of a ZnO-based microcavity using the reactive helicon-wave-excited-plasma sputtering method

9:45 Markus R. Wagner (Technishe Universität Berlin, Germany)

Fabry-Pérot modes of exciton-polaritons in homoepitaxial MBE grown m-plane ZnO epilayers

10:00 Wenxing Huo (Chinese Academy of Sciences, Beijing, China)

Self-aligned photolithography for the fabrication of flexible fully-transparent high-voltage thin film transistors, diodes and inverters

10:15 Kohei Shima (Tohoku University – IMRAM, Sendai, Japan)

A comparative study on SiO2/ZrO2 and SiO2/HfO2 distributed Bragg reflectors for ZnO-based microcavities

10:30 Coffee break

Session 8: Defects in oxide semiconductors II (Chair: J. Zuniga-Perez)

11:00 Andrej Kuznetsov (University of Oslo, Norway)

Band gap maps beyond delocalization limit and identification of carrier traps in novel oxide semiconductors

11:15 Frank Güell (Universitat de Barcelona, Spain)

Role of surface states in the optical properties of ZnO nanowires

11:30 Kewei Liu (Changchun Institute of Optics, China)

ZnMgO-based solar-blind ultraviolet photodetectors

11:45 Tomasz Krajewski (Institute of Physics, Polish Academy of Sciences, Poland)

Influence of thermal treatment on the contribution of native defects to the n-type conductivity of ZnO films obtained by the Atomic Layer Deposition

12:00 David Mora-Fonz (University College London, UK)

Modelling of charge trapping in amorphous ZnO

12:15 Lunch